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ESJC60S30 데이터시트(PDF) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD

부품명 ESJC60S30
상세설명  300mA 30kV -High Voltage Power Diodes
PDF  1 Pages
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제조업체  GETEDZ [GETAI ELECTRONICS DEVICE CO., LTD]
홈페이지  http://www.hvgtsemi.com
Logo GETEDZ - GETAI ELECTRONICS DEVICE CO., LTD

ESJC60S30 데이터시트(HTML) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD

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0.3
25
ESJC60S30
GETE ELECTRONIC CO.,LTD n E-mail:
Tel: 0086-20-8184 9628
n Fax: 0086-20-8184 9638 n www.hvgtsemi.com
01
GUANGZHOU * CHINA
www.getedz.com
sales@getedz.com
China Tel:
4001 83 84 85
DO-722 Series
Lead Diameter 1.2mm
22mm
7.5mm
24mm
300mA 30kV -High Voltage Power Diodes
Features
High speed switching
High surge resisitivity for CRT discharge
High reliability design
Avalanche characteristic
Applications
Maximum Ratings and Characteristics
Absolute Maximum Ratings
High reliability resin molded type high voltage
mesa type silicon chip by epoxy resin.
X light Power supply
Laser
Voltage doubler circuit
Microwave emission power
General purpose high voltage rectifier,
Voltage multiplier assembly.
Epoxy resin molded in vacuum,
Have anticorrosion in the surface
diode
in small size package which is sealed a multilayed
Outline Drawings :
Items
Repetitive Peak Renerse Voltage
Average Output Current
Suege Current
Junction Temperature
Allowable Operation Case Temperature
Symbols
VRRM
IO
IFSM
Tj
Tc
Condition
Ta=25°C,Resistive Load
125
125
-40 to +125
Units
kV
A
A peak
°C
°C
°C
Storage Temperature
Tstg
ESJC60S30
30
peak
Ta=25°C,8.3msec, half sine
Ta=25°C, I
=0.1mA
R
Maximum Reverse Recovery Time
Trr
at 25°C;
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Maximum Forward Voltage Drop
Maximum Reverse Current
Symbols
VF
IR1
IR2
Conditions
at 25°C,VR
at 100°C,V
Units
V
uA
uA
Junction Capacitance
Cj
at 25°C; V R=0V,f=1MHz
--
ESJC60S30
50
5.0
pF
=VRRM
R
=VRRM
--
nS
at 25°C,
F
30
I =0.5I ;
F
I =I (AV);
R
I =0.25I
rr
R
R
F
at: I


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