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MMBD301LT3G 데이터시트(PDF) 2 Page - ON Semiconductor |
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MMBD301LT3G 데이터시트(HTML) 2 Page - ON Semiconductor |
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2 / 5 page ![]() MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 mA) V(BR)R 30 − − V Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT − 0.9 1.5 pF Reverse Leakage (VR = 25 V) Figure 3 IR − 13 200 nAdc Forward Voltage (IF = 1.0 mAdc) Figure 4 VF − 0.38 0.45 Vdc Forward Voltage (IF = 10 mAdc) Figure 4 VF − 0.52 0.6 Vdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Package Shipping† MBD301G TO−92 (Pb−Free) 5,000 Units / Bulk MMBD301LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBD301LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SMMBD301LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
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