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IRF6691 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRF6691
상세설명  HEXFET Power MOSFET plus Schottky Diode
PDF  10 Pages
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF6691 데이터시트(HTML) 2 Page - International Rectifier

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IRF6691
2
www.irf.com
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient –––12––– mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.8
2.5
m
Ω
–––
1.2
1.8
VGS(th)
Gate Threshold Voltage
1.6
–––
2.5
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-4.1
––– mV/°C
–––
–––
1.4
mA
IDSS
Drain-to-Source Leakage Current
–––
–––
500
µA
–––
–––
5
mA
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
110
–––
–––
S
Qg
Total Gate Charge
–––
47
71
Qgs1
Pre-Vth Gate-to-Source Charge
–––14–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
4.4
–––
nC
Qgd
Gate-to-Drain Charge
–––15–––
Qgodr
Gate Charge Overdrive
–––
14
–––
See Fig. 17
Qsw
Switch Charge (Qgs2 + Qgd)
–––19–––
Qoss
Output Charge
–––30–––
nC
RG
Gate Resistance
–––
0.60
1.5
Ω
td(on)
Turn-On Delay Time
–––23–––
tr
Rise Time
–––95–––
ns
td(off)
Turn-Off Delay Time
–––25–––
tf
Fall Time
–––10–––
Ciss
Input Capacitance
–––6580–––
Coss
Output Capacitance
–––
2070
–––
pF
Crss
Reverse Transfer Capacitance
–––
840
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
Ù
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
32
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
260
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
0.65
V
trr
Reverse Recovery Time
–––
32
48
ns
Qrr
Reverse Recovery Charge
–––
26
39
nC
MOSFET symbol
Clamped Inductive Load
VDS = 10V, ID = 26A
Conditions
ƒ = 1.0MHz
VDS = 10V, VGS = 0V
VDD = 16V, VGS = 4.5V
Ãe
VDS = 10V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
VGS = 4.5V
ID = 10mA, reference to 25°C
VDS = VGS, ID = 250µA
VDS = 16V, VGS = 0V
Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 10mA
VGS = 4.5V, ID = 12A
e
VGS = 10V, ID = 15A
e
VDS = 20V, VGS = 0V
TJ = 25°C, IF = 25A
di/dt = 100A/µs
e
TJ = 25°C, IS = 25A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
Typ.
–––
–––
ID = 17A
VGS = 0V
VDS = 10V
ID = 26A
230
26
Max.



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