| 전자부품 데이터시트 검색엔진 |
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L486 데이터시트(PDF) 4 Page - IXYS Corporation |
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L486 데이터시트(HTML) 4 Page - IXYS Corporation |
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4 / 4 page ![]() © 2004 IXYS All rights reserved 4 - 4 MWI 100-12 E8 MKI 100-12 E8 IXYS reserves the right to change limits, test conditions and dimensions. 0 50 100 150 200 0 10 20 30 40 0 100 200 300 400 0 50 100 150 200 0 4 8 12 16 20 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 0 5 10 15 20 0 4 8 12 16 0 250 500 750 1000 0 5 10 15 20 0 4 8 12 16 0 100 200 300 400 0 200 400 600 800 1000 1200 1400 0 50 100 150 200 250 Eoff td(off) Eoff td(off) I C A I C A E off E on t t R G Ω R G Ω V CE t s mJ E on mJ E off t ns t I CM K/W Z thJC V A mJ ns mJ ns tr Eon tr single pulse diode IGBT ns Eon MWI100-12E8 td(on) tf V CE = 600 V V GE = ±15 V I C = 100 A T VJ = 125°C V CE = 600 V V GE = ±15 V I C = 100 A T VJ = 125°C V CE = 600 V V GE = ±15 V R G = 12 Ω T VJ = 125°C V CE = 600 V V GE = ±15 V R G = 12 Ω T VJ = 125°C R G = 12 Ω T VJ = 125°C td(on) tf Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA |
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