NSVBAT54SWT1G datasheet(2/4 Pages) ONSEMI

2 / 4 page

BAT54SWT1G, NSVBAT54SWT1G

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(IR = 10 mA)

V(BR)R

−

Total Capacitance

(VR = 1.0 V, f = 1.0 MHz)

−

7.6

Reverse Leakage

(VR = 25 V)

−

0.5

2.0

mAdc

Forward Voltage

(IF = 0.1 mAdc)

−

0.22

0.24

Vdc

Forward Voltage

(IF = 30 mAdc)

−

0.41

0.5

Vdc

Forward Voltage

(IF = 100 mAdc)

−

0.52

0.8

Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)

trr

−

5.0

Forward Voltage

(IF = 1.0 mAdc)

−

0.29

0.32

Vdc

Forward Voltage

(IF = 10 mAdc)

−

0.35

0.40

Vdc

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Notes: 1. A 2.0 k

W variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V

2 k

820

0.1

DUT

100

0.1

W OUTPUT

PULSE

GENERATOR

W INPUT

SAMPLING

OSCILLOSCOPE

10%

90%

trr

iR(REC) = 1 mA

OUTPUT PULSE

(IF = IR = 10 mA; measured

at iR(REC) = 1 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

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