2N6674

2N6675

NPN SILICON

POWER TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6674, 2N6675

types are NPN Silicon Triple Diffused Mesa Power

Transistors designed for high voltage switching

applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C)

SYMBOL

2N6674

2N6675

UNITS

Collector-Emitter Voltage

VCEV

450

650

V

Collector-Emitter Voltage

VCEO

300

400

V

Emitter-Base Voltage

VEBO

7.0

V

Continuous Collector Current

IC

15

A

Peak Collector Current

ICM

20

A

Continuous Base Current

IB

5.0

A

Power Dissipation

PD

175

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

ΘJC

1.0

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICEV

VCE=Rated VCEV, VBE=1.5V

0.1

mA

ICEV

VCE=Rated VCEV, VBE=1.5V, TC=100°C

1.0

mA

IEBO

VEB=7.0V

2.0

mA

BVCEO

IC=200mA (2N6674)

300

V

BVCEO

IC=200mA (2N6675)

400

V

VCE(SAT) IC=10A, IB=2.0A

1.0

V

VCE(SAT) IC=10A, IB=2.0A, TC=100°C

2.0

V

VCE(SAT) IC=15A, IB=5.0A

5.0

V

VBE(SAT)

IC=10A, IB=2.0A

1.5

V

hFE

VCE=2.0V, IC=10A

8.0

20

IS/b

VCE=30V, IC=5.9A

1.0

s

IS/b

VCE=100V, IC=250mA

1.0

s

hfe

VCE=10V, IC=1.0A, f=5.0MHz

3.0

10

ft

VCE=10V, IC=1.0A, f=5.0MHz

15

50

MHz

Cob

VCB=10V, IE=0, f=100kHz

150

500

pF

TO-3 CASE

R1 (10-March 2011)

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