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ADG604 데이터시트(PDF) 4 Page - Analog Devices

부품명 ADG604
상세설명  1 pC Charge Injection, 100 pA Leakage CMOS 짹5 V/5 V/3 V 4-Channel Multiplexer
PDF  12 Pages
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ADG604 데이터시트(HTML) 4 Page - Analog Devices

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REV. 0
–4–
ADG604–SPECIFICATIONS
SINGLE SUPPLY1 (V
DD = 3 V
10%, VSS = 0 V, GND = 0 V. All specifications –40 C to +125 C unless otherwise noted.)
–40 C to
–40 C to
Parameter
25 C
+85 C
+125 C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD
V
VDD = 2.7 V, VSS = 0 V
On Resistance (RON)
380
420
460
Ω Typ
VS = 1.5 V, IS = –1 mA,
Test Circuit 1
On Resistance Match Between
Channels ( RON)5
Ω Typ
VS = 1.5 V, IS = –1 mA
LEAKAGE CURRENTS
VDD = 3.3 V
Source OFF Leakage IS (OFF)
±0.01
nA Typ
VS = 1 V/3 V, VD = 3 V/1 V,
±0.1
±0.25
±4
nA Max
Test Circuit 2
Drain OFF Leakage ID (OFF)
±0.01
nA Typ
VS = 1 V/3 V, VD = 3 V/1 V,
±0.1
±0.5
±8
nA Max
Test Circuit 2
Channel ON Leakage ID, IS (ON)
±0.01
nA Typ
VS = VD = 1 V/3 V,
±0.1
±0.5
±10
nA Max
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, VINH
2.0
V Min
Input Low Voltage, VINL
0.8
V Max
Input Current
IINL or IINH
0.005
µA Typ
VIN = VINL or VINH
±0.1
µA Max
CIN, Digital Input Capacitance
2
pF Typ
DYNAMIC CHARACTERISTICS
2
Transition Time
170
ns Typ
VS1 = 2 V, VS4 = 0 V, RL = 300
Ω,
320
390
450
ns Max
CL = 35 pF, Test Circuit 4
tON Enable
180
ns Typ
RL = 300
Ω, C
L = 35 pF
250
265
390
ns Max
VS = 2 V, Test Circuit 6
tOFF Enable
100
ns Typ
RL = 300
Ω, CL = 35 pF
160
205
225
ns Max
VS = 2 V, Test Circuit 6
Break-Before-Make Time Delay, tBBM
100
ns Typ
RL = 300
Ω, CL = 35 pF,
10
ns Min
VS1 = VS2 = 2 V, Test Circuit 5
Charge Injection
0.3
pC Typ
VS = 0 V to 3.3 V, RS = 0
Ω, C
L = 1
µF,
Test Circuit 7
Off Isolation
–65
dB Typ
RL = 50
Ω, CL = 5 pF, f = 10 MHz,
Test Circuit 8
Channel-to-Channel Crosstalk
70
dB Typ
RL = 50
Ω, CL = 5 pF, f = 10 MHz,
Test Circuit 10
Bandwidth –3 dB
250
MHz Typ
RL = 50
Ω, C
L = 5 pF, Test Circuit 9
CS (OFF)
5
pF Typ
f = 1 MHz
CD (OFF)
17
pF Typ
f = 1 MHz
CD, CS (ON)
18
pF Typ
f = 1 MHz
POWER REQUIREMENTS
VDD = 3.3 V
Digital Inputs = 0 V or 3.3 V
IDD
0.001
µA Typ
1.0
µA Max
NOTES
1Y Version Temperature Range: –40
°C to +125°C
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.



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