MBR16100CTG

www.onsemi.com

2

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

V

Average Rectified Forward Current

Per Diode

Per Device

8.0

16

A

Peak Repetitive Forward Current

(Square Wave, 20 kHz)

16

A

Non-repetitive Peak Surge Current

(Surge applied at rated load conditions half-wave, single phase, 60 Hz)

150

A

Peak Repetitive Reverse Surge Current (2.0

ms, 1.0 kHz)

0.5

A

Operating Junction Temperature (Note 1)

*65 to +175

°C

Storage Temperature

*65 to +175

°C

dv/dt

10,000

V/

ms

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Maximum Thermal Resistance,

Junction−to−Case (Min. Pad)

Junction−to−Ambient (Min. Pad)

2.0

60

°C/W

Characteristic

Symbol

Min

Typical

Max

Unit

Maximum Instantaneous Forward Voltage (Note 2)

−

−

−

−

0.56

0.68

0.67

0.79

0.60

0.74

0.69

0.84

V

Maximum Instantaneous Reverse Current (Note 2)

−

−

0.95

0.0013

5.0

0.1

mA

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width = 300

ms, Duty Cycle ≤ 2%.