FMMV2102 datasheet(1/1 Pages) ZETEX

부품명	FMMV2102

상세설명	SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES

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제조업체	ZETEX [Zetex Semiconductors]

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SOT23

SOT23 SILICON PLANAR

VARIABLE CAPACITANCE DIODES

ISSUE 3 JANUARY 1996

7

PIN CONFIGURATION

PARTMARKING DETAILS

SEE TUNING CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Reverse Voltage

VR

30

V

Forward Current

IF

200

mA

Power Dissipation at Tamb=25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Reverse Breakdown

Voltage

VBR

30

V

IR = 10µA

Reverse current

IR

20

nA

VR = 25V

Series Inductance

LS

3.0

nH

f=250MHz

Lead length≈1.5mm

Diode Capacitance

Temperature Coefficient

TCC

280

400

ppm/ °C VR = 4V, f=1MHz

Lead length≈1.5mm

Case Capacitance

CC

0.15

pF

f=1MHz

TUNING CHARACTERISTICS (at Tamb= 25°C).

Type No.

Nominal Capacitance (pF)

VR = 4V, f=1MHz

Q Figure of MERIT

VR = 4V, f=50MHz

Turning Ratio

C2 / C30

f=1MHz

Partmark

Detail

Min.

Nom.

Max.

Min.

Max.

FMMV2101

6.1

6.8

7.5

450

2.5

3.3

6R

FMMV2103

9.0

10.0

11.0

400

2.6

3.3

6G

FMMV2104

10.8

12.0

13.2

400

2.6

3.3

6H

FMMV2105

13.5

15.0

16.5

400

2.6

3.3

6J

FMMV2107

19.8

22.0

24.2

350

2.7

3.3

6L

FMMV2108

24.3

27.0

29.7

300

2.7

3.3

6M

FMMV2109

29.3

33.0

36.3

280

2.7

3.3

6N

* SELECTED DEVICE RANGE OFFERED ONLY

3 - 185

FMMV2101

to

FMMV2109

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Zetex Semiconductors	FMMV2102	58Kb / 1P	SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES

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