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MBR120LSF 데이터시트(PDF) 4 Page - ON Semiconductor

부품명 MBR120LSF
상세설명  Surface Mount Schottky Power Rectifier
PDF  5 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBR120LSF 데이터시트(HTML) 4 Page - ON Semiconductor

  MBR120LSF Datasheet HTML 1Page - ON Semiconductor MBR120LSF Datasheet HTML 2Page - ON Semiconductor MBR120LSF Datasheet HTML 3Page - ON Semiconductor MBR120LSF Datasheet HTML 4Page - ON Semiconductor MBR120LSF Datasheet HTML 5Page - ON Semiconductor  
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MBR120LSF, NRVB120LSF
http://onsemi.com
4
12
0
VR, REVERSE VOLTAGE (VOLTS)
1000
100
10
6.0
2.0
4.0
8.0
10
TJ = 25°C
20
14
16
18
Figure 7. Capacitance
12
0
VR, DC REVERSE VOLTAGE (VOLTS)
125
100
65
6.0
2.0
4.0
8.0
10
20
14
16
18
Figure 8. Typical Operating Temperature
Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation:
TJ = TJmax − r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
70
75
80
85
90
95
105
110
115
120
RqJA = 25.6°C/W
400
°C/W
324.9
°C/W
235
°C/W
130
°C/W
Figure 9. Thermal Response
1000
0.1
0.00001
t1, TIME (sec)
1000
1
0.0001
0.001
0.01
1
10
100
0.000001
0.1
10
100
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
qJA = 321.8 °C/W
Test Type > Min Pad < Die Size 38x38 @ 75% mils
D = 0.5
SINGLE PULSE
0.2
0.1
0.05
0.01



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