TLDR4100-AS12 datasheet(1/5 Pages) VISHAY

부품명	TLDR4100-AS12

상세설명	Very high intensity even at low drive currents

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제조업체	VISHAY [Vishay Siliconix]

홈페이지	http://www.vishay.com

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TLDR4100

www.vishay.com

Vishay Semiconductors

Rev. 1.1, 23-Apr-13

1

Document Number: 82561

For technical questions, contact: LED@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Intensity LED, Ø 3 mm Untinted Clear Package

DESCRIPTION

This LED contains the double heterojunction (DH) GaAlAs on

GaAs technology.

This deep red LED can be utilized over a wide range of drive

current. It can be DC or pulse driven to achieve desired light

output.

The device is available in a 3 mm untinted clear package.

PRODUCT GROUP AND PACKAGE DATA

• Product group: LED

•Package: 3 mm

• Product series: standard

• Angle of half intensity: ± 22°

FEATURES

• Exceptional brightness

• Very high intensity even at low drive currents

• Wide viewing angle

• Low forward voltage

• 3 mm (T-1) untinted clear package

• Deep red color

• Categorized for luminous intensity

• Outstanding material efficiency

• Material

categorization:

For

definitions

of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Status lights

• Off/on indicator

• Background illumination

• Readout lights

• Maintenance lights

•Legend light



19220

PARTS TABLE

PART

COLOR

LUMINOUS INTENSITY

(mcd)

at IF

(mA)

WAVELENGTH

(nm)

at IF

(mA)

FORWARD VOLTAGE

(V)

at IF

(mA)

TECHNOLOGY

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

TLDR4100

Red

40

90

-

20

-

648

-

20

-

1.8

2.2

20

GaAlAs on GaAs

TLDR4100-AS12

Red

40

90

-

20

-

648

-

20

-

1.8

2.2

20

GaAlAs on GaAs

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

TLDR4100

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

VR

6V

DC forward current

Tamb  60 °C

IF

50

mA

Surge forward current

tp  10 μs

IFSM

1A

Power dissipation

Tamb  60 °C

PV

100

mW

Junction temperature

Tj

+ 100

°C

Operating temperature range

Tamb

- 40 to + 100

°C

Storage temperature range

Tstg

- 55 to + 100

°C

Soldering temperature

t

 5 s, 2 mm from body

Tsd

260

°C

Thermal resistance junction/ambient

RthJA

400

K/W

유사한 부품 번호 - TLDR4100-AS12

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	TLDR440.	172Kb / 6P	High Intensity LED, ∅ 3 mm Tinted Diffused 30-Aug-04
	TLDR4400	74Kb / 5P	High Intensity LED, 3 mm Tinted Diffused 04-Feb-99
	TLDR4400	172Kb / 6P	High Intensity LED, ∅ 3 mm Tinted Diffused 30-Aug-04
	TLDR4400	104Kb / 5P	High Intensity LED in Ø 3 mm Tinted Diffused Package 11-Dec-13
	TLDR4400	108Kb / 5P	High Intensity LED in Ø 3 mm Tinted Diffused Package 14-Oct-14

More results

유사한 설명 - TLDR4100-AS12

제조업체	부품명	데이터시트	상세설명
Infineon Technologies A...	BCR401R	42Kb / 3P	LED Driver(Supplies stable bias current even at low battery voltage) Aug-29-2001
Infineon Technologies A...	BCR402U	174Kb / 5P	LED Driver(Supplies stable bias current even at low battery voltage) Feb-03-2004
Jianghai Europe GmbH	CD287GC	1,010Kb / 5P	EC Radial 105째C 4.000 - 10.000h Lifetime Low ESR at High Ripple Currents(Radial)
Hamamatsu Corporation	C10508	591Kb / 5P	Variable gain and stable detection even at high gains
International Rectifier	IR3477M	904Kb / 21P	Excellent Efficiency at Very Low Output Currents
Hamamatsu Corporation	C10508-01	510Kb / 7P	Variable gain, stable detection even at high gain
List of Unclassifed Man...	SFM3200	331Kb / 7P	Superior performance at very low flows
Vishay Siliconix	TLDR6400	482Kb / 5P	Very high intensity even at low drive currents 29-Apr-13
AVAGO TECHNOLOGIES LIMI...	HLMP-C115	271Kb / 10P	Very high intensity
AVAGO TECHNOLOGIES LIMI...	HLMP-4100	144Kb / 6P	Very high intensity at low drive currents

More results

TLDR4100-AS12 데이터시트(PDF) 1 Page - Vishay Siliconix

TLDR4100-AS12 데이터시트(HTML) 1 Page - Vishay Siliconix

유사한 부품 번호 - TLDR4100-AS12

유사한 설명 - TLDR4100-AS12

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