© 2000 IXYS All rights reserved

1 - 2

V

RSM

V

x V

RRM

Anode

Cathode

V

V

V

on stud

on stud

900

-

800

DS 35-08A

DSI 35-08A

1300

-

1200

DS 35-12A

DSI 35-12A

1300

1300

1200

DSA 35-12A

DSAI 35-12A

1700

1750

1600

DSA 35-16A

DSAI 35-16A

1900

1950

1800

DSA 35-18A

DSAI 35-18A

x Only for Avalanche Diodes

Symbol

Test Conditions

Maximum Ratings

I

F(RMS)

T

VJ

= T

VJM

80

A

I

F(AVM)

T

49

A

P

RSM

DSA(I) types, T

kW

I

FSM

T

VJ

= 45

°C;

t = 10 ms (50 Hz), sine

650

A

V

R

= 0

t = 8.3 ms (60 Hz), sine

690

A

T

VJ

= T

VJM

t = 10 ms (50 Hz), sine

600

A

V

R

= 0

t = 8.3 ms (60 Hz), sine

640

A

T

VJ

= 45

°C

t = 10 ms (50 Hz), sine

2100

V

R

= 0

t = 8.3 ms (60 Hz), sine

2000

T

VJ

= T

VJM

t = 10 ms (50 Hz), sine

1800

V

R

= 0

t = 8.3 ms (60 Hz), sine

1700

T

VJ

-40...+180

°C

T

VJM

180

°C

T

stg

-40...+180

°C

M

d

Mounting torque

4.5-5.5

Nm

40-49

lb.in.

Weight

15

g

V

RRM

= 800-1800 V

I

I

Features

q

International standard package,

JEDEC DO-203 AB (DO-5)

q

Planar glassivated chips

Applications

q

High power rectifiers

q

Field supply for DC motors

q

Power supplies

Advantages

q

Space and weight savings

q

Simple mounting

q

Improved temperature and power

cycling

q

Reduced protection circuits

Symbol

Test Conditions

Characteristic Values

I

R

T

VJ

= T

£

4mA

V

F

I

F

= 150 A; T

£

1.55

V

V

T0

For power-loss calculations only

0.85

V

r

T

T

VJ

= T

VJM

4.5

m

W

R

thJC

DC current

1.05

K/W

R

thJH

DC current

1.25

K/W

d

S

Creepage distance on surface

4.05

mm

d

A

Strike distance through air

3.9

mm

a

Max. allowable acceleration

100

Dimensions in mm (1 mm = 0.0394")

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

DS

35

DSI

35

DSA 35

DSAI 35

Rectifier Diode

Avalanche Diode

A = Anode

C = Cathode

DO-203 AB

DS

DSI

DSA

DSAI

C

A

A

C

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