BAS116L datasheet(2/4 Pages) ONSEMI

2 / 4 page

BAS116L

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage (IBR = 100 mAdc)

V(BR)

−

Vdc

Reverse Voltage Leakage Current (VR = 75 Vdc)

Reverse Voltage Leakage Current (VR = 75 Vdc, TJ = 150°C)

−

5.0

nAdc

Forward Voltage (IF = 1.0 mAdc)

Forward Voltage (IF = 10 mAdc)

Forward Voltage (IF = 50 mAdc)

Forward Voltage (IF = 150 mAdc)

−

900

1000

1100

1250

Diode Capacitance (VR = 0 V, f = 1.0 MHz)

−

2.0

Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1)

trr

−

3.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. A 2.0 k

W variable resistor adjusted for a Forward Current (IF) of 10 mA.

2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

3. tp » trr

+10 V

2.0 k

820

0.1

DUT

100

0.1

W Output

Pulse

Generator

W INPUT

SAMPLING

OSCILLOSCOPE

10%

90%

trr

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

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