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8AF 데이터시트(PDF) 3 Page - Vishay Siliconix |
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8AF 데이터시트(HTML) 3 Page - Vishay Siliconix |
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3 / 7 page ![]() Document Number: 93530 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 17-Jun-08 3 8AF Series Pressfit Rectifier Diodes, 50 A Vishay Semiconductors Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Forward Power Loss Characteristics R thJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180° 0.042 0.026 TJ = TJ maximum K/W 120° 0.045 0.043 90° 0.06 0.06 60° 0.10 0.10 30° 0.15 0.15 140 150 160 170 180 190 200 0 5 10 15 20 25 30 35 40 45 50 55 30° 60° 90° 120° 180° Conduction Angle 8AF Series R (DC) = 0.6 K/W thJC Average Forward Current (A) 140 150 160 170 180 190 200 0 102030 4050 6070 80 DC 30° 60° 90° 120° 180° Conduction Period Average Forward Current (A) 8AF Series R (DC) = 0.6 K/W thJC 0 25 50 75 100 125 150 R = 1 K/W - D elta R 1.5 K/W 2 K /W 3 K /W 5 K/W 10 K/W 15 K/W Maximum Allowable Ambient Temperature (°C) 0 10 20 30 40 50 60 70 80 010 20 30 40 50 60 Average Forward Current (A) RMS Limit Conduction Angle 180° 120° 90° 60° 30° 8AF Series T = 195°C J |
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