MSB92ASWT1G datasheet(3/5 Pages) ONSEMI

부품명	MSB92ASWT1G

상세설명	PNP Silicon General Purpose High Voltage Transistor

PDF	5 Pages

Scroll/Zoom	100%

제조업체	ONSEMI [ON Semiconductor]

홈페이지	http://www.onsemi.com

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3 / 5 page

MSB92ASWT1G, MSB92AS1WT1G

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TYPICAL CHARACTERISTICS

Figure 1. DC Current Gain

Figure 2. VCE(sat) Curve

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

0.0001

200

400

0.1

0.01

0.001

0.0001

0.1

0.2

0.5

0.6

Figure 3. VBE(sat) Curve

Figure 4. VBE(on) Curve

Figure 5. Current−Gain Bandwidth Product

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

IC, COLLECTOR CURRENT (mA)

IB, BASE CURRENT (mA)

0.1

1000

100

0.1

0.01

0.001

0.0001

0.4

1.6

2.0

100

300

150°C

VCE = 5 V

25°C

IC/IB = 10

150°C

−55°C

0.3

0.4

0.7

100

VCE = 20 V

TA = 25°C

100

TA = 25°C

IC = 50 mA

25°C

−55°C

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

0.0001

0.2

0.3

0.4

0.7

0.8

25°C

IC/IB = 10

150°C

−55°C

0.5

0.6

1.0

0.9

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

0.0001

0.2

0.3

0.4

0.7

0.8

25°C

150°C

−55°C

0.5

0.6

1.0

0.9

1.2

1.1

VCE = 5 V

0.8

1.2

IC = 10 mA

1.0 mA

0.1 mA

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