STS4C3F60L datasheet(3/11 Pages) STMICROELECTRONICS

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STS4C3F60L

ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 7: Switching On

Table 8: Switching Off

Table 9: Source-Drain Diodef

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(2) Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

N-CHANNEL

VDD = 30 V, ID = 2 A,

RG= 4.7 Ω, VGS = 4.5 V

P-CHANNEL

VDD = 30 V, ID = 1.5 A,

RG= 4.7 Ω, VGS = 4.5 V

(Resistive Load see, Figure 28)

n-ch

p-ch

n-ch

p-ch

124

Total Gate Charge

N-CHANNEL

VDD= 48 V, ID= 4 A,

VGS= 4.5 V

P-CHANNEL

VDD = 48 V, ID = 3 A,

VGS = 4.5 V

(see, Figure 31)

n-ch

p-ch

11.6

20.4

15.7

Qgs

Gate-Source Charge

n-ch

p-ch

4.5

Qgd

Gate-Drain Charge

n-ch

p-ch

4.7

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

Turn-off Delay Time

Fall Time

N-CHANNEL

VDD = 30 V, ID = 2 A,

RG= 4.7 Ω, VGS = 4.5 V

P-CHANNEL

VDD = 30 V, ID = 1.5 A,

RG= 4.7 Ω, VGS = 4.5 V

(Resistive Load see, Figure 28)

n-ch

p-ch

n-ch

p-ch

14.5

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

n-ch

p-ch

ISDM (2)

Source-drain Current (pulsed)

n-ch

p-ch

VSD (1)

Forward On Voltage

ISD = 4 A, VGS = 0

ISD = 3 A, VGS = 0

n-ch

p-ch

1.2

trr

Reverse Recovery Time

N-CHANNEL

ISD = 4 A, di/dt = 100 A/µs

VDD = 20V, Tj = 150°C

P-CHANNEL

ISD = 3 A, di/dt = 100 A/µs

VDD = 20V, Tj = 150°C

(see test circuit, Figure 29)

n-ch

p-ch

Qrr

Reverse Recovery Charge

n-ch

p-ch

68.2

IRRM

Reverse Recovery Current

n-ch

p-ch

3.1

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