TSDF1920W

Vishay Semiconductors

1 (4)

www.vishay.com

Document Number 85092

Rev. 2, 02–May–02

25 GHz Silicon NPN Planar RF Transistor

Electrostatic sensitive device.

Observe precautions for handling.

Applications

For RF front–ends, low noise, and wideband

applications, such as in analogue and digital cellular

and cordless phones (DECT, PHD), in TV systems

(e.g. satellite tuners), in high frequency oscillators up

to 12 GHz, in pagers and radar detectors.

Features

D Very low noise figure

D Very high power gain

D Low feedback capacitance

D Emitter pins are thermal leads

12

43

16712

TSDF1920W Marking: YH3

Plastic case (SOT 343R)

1 = Emitter, 2 = Base, 3 = Emitter, 4 = Collector

Absolute Maximum Ratings

Parameter

Test Conditions

Symbol

Value

Unit

Collector-base voltage

10

V

Collector-emitter voltage

3.5

V

Emitter-base voltage

1.5

V

Collector current

40

mA

Total power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

–65 to +150

°C

Junction ambient

on glass fibre printed board

µm Cu

450

K/W