NTP2955G. datasheet(2/5 Pages) ONSEMI

2 / 5 page

NTP2955

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ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −250 mA

−60

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = −48 V

TJ = 25°C

−1.0

TJ = 125°C

−10

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±20 V

±100

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = −250 mA

−2.0

−4.0

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

mV/

°C

Drain−to−Source On Resistance

RDS(on)

VGS = −10 V, ID = −12 A

156

196

Forward Transconductance

gFS

VDS = −60 V, ID = −12 A

6.0

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = −25 V

507

700

Output Capacitance

COSS

150

250

Reverse Transfer Capacitance

CRSS

Total Gate Charge

QG(TOT)

VGS = −10 V, VDS = −48 V,

ID = −12 A

Threshold Gate Charge

QG(TH)

1.6

2.5

Gate−to−Source Charge

QGS

3.4

Gate−to−Drain Charge

QGD

6.2

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(on)

VGS = −10 V, VDD = −30 V,

ID = −12 A, RG = 9.1 W

Rise Time

Turn−Off Delay Time

td(off)

Fall Time

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = −12 A

TJ = 25°C

−1.6

−2.0

TJ = 125°C

−1.36

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = −12 A

Charge Time

Discharge Time

Reverse Recovery Charge

QRR

126

2. Pulse Test: pulse width

≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

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