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AM29F016-120SIB 데이터시트(PDF) 34 Page - Advanced Micro Devices

부품명 AM29F016-120SIB
상세설명  16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
PDF  36 Pages
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29F016-120SIB 데이터시트(HTML) 34 Page - Advanced Micro Devices

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34
Am29F016
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. 25
°C, 5 V V
CC, 100,000 cycles.
2. Although Embedded Algorithms allow for a longer chip program and erase time, the actual time will be considerably less since
bytes program or erase significantly faster than the worst case byte.
3. Under worst case condition of 90
°C, 4.5 V V
CC, 100,000 cycles.
LATCHUP CHARACTERISTIC
Includes all pins except VCC. Test conditions: VCC = 5.0 Volt, one pin at a time.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Parameter
Limits
Unit
Comments
Min
Typ
Max
Sector Erase Time
1 (Note 1)
8
sec
Excludes 00H programming prior
to erasure
Chip Erase Time
32
256
sec
Excludes 00H programming prior
to erasure
Byte Programming Time
7
300 (Note 3)
µs
Excludes system-level overhead
Chip Programming Time
14.4 (Note 1)
43.2 (Notes 2, 3)
sec
Excludes system-level overhead
Min
Max
Input Voltage with respect to VSS on I/O pins
–1.0 V
VCC + 1.0 V
VCC Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Conditions
Min
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF



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