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STBCFG01 데이터시트(PDF) 11 Page - STMicroelectronics |
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STBCFG01 데이터시트(HTML) 11 Page - STMicroelectronics |
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11 / 37 page ![]() STBCFG01 Electrical characteristics DocID026474 Rev 3 11/37 Symbol Parameter Test conditions Min. Typ. Max. Unit Fast charge current accuracy -10 10 % ITERM Termination current 50 300 mA Termination current accuracy -30 30 % tTERM Charge termination deglitch time 170 ms VTRK Trickle charge to pre- charge battery voltage threshold 2 V VTRK accuracy -5 +5 % tTPD Trickle charge to pre- charge threshold deglitch time 100 ms VPRE Pre-charge to fast charge battery voltage threshold 3 V VPRE accuracy -5 +5 % tPFD Pre-charge to fast charge threshold deglitch time 170 ms VDETH Battery detection high threshold 3 V VDETL Battery detection low threshold 2 V IDETSNK Sink detection current -5 mA tDETSRC Current source detection time 340 ms tDETSNK Current sink detection time 200 ms RON_HI High-side MOSFET on- resistance (including reverse blocking MOFET) 300 mΩ RON_LOW Low-side MOSFET on- resistance 125 mΩ RSNS Internal sensing resistor 35 68 mΩ tMAXPRE Maximum pre-charge time Including trickle charge 45 min. tMAXCHG Maximum fast charge time Including taper charge 360 min. OTG boost regulator IBQ Boost quiescent current VBAT = 3.7 V, no load 4 mA |
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