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2SD965 데이터시트(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SD965 데이터시트(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 4 page ![]() Production specification LOW VOLTAGE HIGH CURRENT TRANSISTOR 2SD965 E032 www.gmicroelec.com Rev.B 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA ,IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 7 V Collector cut-off current ICBO VCB=10V, IE=0 0.1 uA Emitter cut-off current IEBO VEB=7V,IC=0 0.1 uA Collector-emitter saturation voltage VCE(sat) IC/IB=3A/0.1A 1 V VCE=2V, IC=1mA 200 VCE=2V, IC=0.5A 230 1000 DC current gain(note) hFE VCE=2V, IC=0.1A 150 Current gain bandwidth product fT VCE=6V,IC=50mA 150 MHz Output Capacitance Cob VCB=20V, f=1MHz ,IE=0A 50 pF CLASSIFICATION OF hFE2 RANK Q R S T RANGE 230-380 340-600 560-800 600-1000 |
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