NTLJS2103P datasheet(4/6 Pages) ONSEMI

4 / 6 page

NTLJS2103P

http://onsemi.com

TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

SINGLE PULSE TIME (s)

QG, TOTAL GATE CHARGE (nC)

VDS = −9.6 V

ID = −5.9 A

TJ = 25°C

-VGS

QGS

QGD

-VDS

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

VGS = 0 V

TJ = 25°C

TJ = 150°C

Figure 11. Threshold Voltage

TJ, JUNCTION TEMPERATURE (°C)

ID = −250 mA

Figure 12. Single Pulse Maximum Power

Dissipation

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS = 0 V

TJ = 25°C

f = 1 MHz

Coss

Ciss

Crss

RG, GATE RESISTANCE (OHMS)

td(off)

td(on)

VGS = −4.5 V

VDD = −8.0 V

ID = −5.9 A

200

400

600

800

1000

1200

1400

1600

1800

100

10000

100

0.2

0.4

0.6

0.8

1.0

1.2

1.4

−50

150

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

−25

100

125

0.001

0.01

100

0.1

1000

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