NTJS3151P datasheet(2/5 Pages) ONSEMI

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NTJS3151P, NVJS3151P

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −250 mA

−12

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = −9.6 V,

VDS = 0 V

TJ = 25°C

−1.0

TJ = 125°C

−2.5

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±4.5 V

±1.5

VDS = 0 V, VGS = ±12 V

±10

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 100 mA

−0.40

−1.2

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

3.4

mV/

°C

Drain−to−Source On Resistance

RDS(on)

VGS = −4.5 V, ID = −3.3 A

VGS = −2.5 V, ID = −2.9 A

VGS = −1.8 V, ID = −1.0 A

133

160

Forward Transconductance

gFS

VGS = −10 V, ID = −3.3 A

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = −12 V

850

Output Capacitance

COSS

170

Reverse Transfer Capacitance

CRSS

110

Total Gate Charge

QG(TOT)

VGS = −4.5 V, VDS = −5.0 V,

ID = −3.3 A

8.6

Gate−to−Source Charge

QGS

1.3

Gate−to−Drain Charge

QGD

2.2

Gate Resistance

3000

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(ON)

VGS = −4.5 V, VDD = −6.0 V,

ID = −1.0 A, RG = 6.0 W

0.86

Rise Time

1.5

Turn−Off Delay Time

td(OFF)

3.5

Fall Time

3.9

DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)

Forward Diode Voltage

VSD

VGS = 0 V,

IS = −3.3 A

TJ = 25°C

−0.85

−1.2

TJ = 125°C

−0.7

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: pulse width

≤ 300ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

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