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SIP41111 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 SIP41111
상세설명  75 V/2 A Peak, Low Cost, High Frequency Half Bridge Driver
PDF  10 Pages
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
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SIP41111 데이터시트(HTML) 2 Page - Vishay Siliconix

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Document Number: 74292
S-61214–Rev. A, 17-Jul-06
Vishay Siliconix
SiP41111
BLOCK DIAGRAMS
Notes:
a. All voltages are referenced to ground unless otherwise specified.
b. Device mounted with all leads soldered or welded to PC board.
c. Derate 6.5 mW/°C above + 70 °C.
d. Derate 25 mW/°C above + 70 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
LEVEL SHIFT
UNDER VOLTAGE
V
HI
LI
V
HB
HO
HS
LO
SS
DD
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
Supply Voltage, VDD, VHB-VHS
a
- 0.3 to 14
V
LI and HI Voltagea
- 0.3 to VDD + 0.3
Voltage on LOa
- 0.3 to VDD + 0.3
Voltage on HOa
VHS - 0.3 to VHB + 0.3
Voltage on HSa
Continuous
- 1 to + 89
Voltage on HBa
VDD = 12 V
+ 89
Average Current in VDD to HB diode
100
mA
ESD Classification
Class 1
1
kV
THERMAL INFORMATION
Parameter
Limit
Unit
Thermal Resistance (Typical)
θJA
SOICb
153
°C/W
SOIC (PowerPak)b
40
Max Power Dissipation
at 70 °C in Free Air (SOIC)c
522
mW
at 70 °C in Free Air (SOIC PowerPAK)d
2.0
W
Junction Temperature Range
- 65 to 150
°C
Storage Temperature Range
- 55 to 150
RECOMMENDED OPERATING RANGE
Parameter
Limit
Unit
Supply Voltage
VDD
+ 9 to 13.2
V
Voltage on HS
- 1 to 75
Voltage on HB
VHS + 8 to VHS + 13.2 and VDD - 1 to VDD + 75



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