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STM8T141 데이터시트(PDF) 27 Page - STMicroelectronics |
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STM8T141 데이터시트(HTML) 27 Page - STMicroelectronics |
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27 / 50 page ![]() STM8T141 Design guidelines Doc ID 15699 Rev 7 27/50 Figure 20. Connecting the shield (coaxial cable implementation) 8.2 Sensitivity adjustment Several factors impact device sensitivity: ● The sensing electrode material and size ● The touch panel material and thickness ● The board layout and in particular the sensing signal tracks ● The value of the sampling capacitor (CS) for proximity thresholds only ● The ground coupling of the object (finger or hand) and sensor. ● The touch or proximity detection threshold selected by the option byte. 8.2.1 CS influence on sensitivity In touch mode, the Cs capacitor value has no influence on the sensitivity as the thresholds are relative to the actual reference value. In proximity mode, the Cs value allows the sensivity to be tuned. A higher sampling capacitor value increases the resolution and the sensitivity but also the charging time. Decreasing the sampling capacitor value therefore decreases the sensitivity. For more details, please refer to application note AN2966. 8.2.2 PCB layout and construction The PCB traces, wiring, and components associated or in contact with CX pins become touch sensitive and should be treated with caution to limit the touch area to the desired location. As an example, multiple touch electrodes connected to a sensing channel can be used to create control surfaces on both sides of an object. It is important to limit the amount of stray capacitance on the CX pin. This can be done by minimizing trace lengths and widths to achieve for higher gain without using higher values of CS. To minimize cross-coupling, electrode traces from adjacent sensing channel should not run close to each other for long distances. For detailed information on the impacts of the first three factors, refer to application note AN2869. VDD SHLDOUT CX Plastic jacket Metal shield Center core Dielectric insulator ai15527 100 k Ω R SHIELD R X SHLDIN Coaxial cable 2 k Ω |
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