STM32L151X8 datasheet(92/133 Pages) STMICROELECTRONICS

92 / 133 page

Electrical characteristics

STM32L151x6/8/B STM32L152x6/8/B

92/133

DocID17659 Rev 12

Figure 25. USB timings: definition of data signal rise and fall time

Table 51. USB DC electrical characteristics

Symbol

Parameter

Conditions

Min.(1)

1. All the voltages are measured from the local ground potential.

Max.(1)

Unit

Input levels

VDD

USB operating voltage(2)

2. To be compliant with the USB 2.0 full speed electrical specification, the USB_DP (D+) pin should be pulled

up with a 1.5 k

Ω resistor to a 3.0-to-3.6 V voltage range.

-3.0

3.6

VDI(3)

3. Guaranteed by characterization results.

Differential input sensitivity

I(USB_DP, USB_DM)

0.2

VCM(3)

Differential common mode range Includes VDI range

0.8

2.5

VSE(3)

Single ended receiver threshold

1.3

2.0

Output levels

VOL(4)

4. Tested in production.

Static output level low

RL of 1.5 kΩ to 3.6 V(5)

5. RL is the load connected on the USB drivers.

-0.3

VOH(4)

Static output level high

RL of 15 kΩ to VSS(5)

2.8

3.6

Table 52. USB: full speed electrical characteristics

Driver characteristics(1)

1. Guaranteed by design.

Symbol

Parameter

Conditions

Min

Max

Unit

Rise time(2)

2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB

Specification - Chapter 7 (version 2.0).

CL = 50 pF

420

Fall Time(2)

CL = 50 pF

trfm

Rise/ fall time matching

tr/tf

110

VCRS

Output signal crossover voltage

1.3

2.0

STM32L151x8 데이터시트(PDF) 92 Page - STMicroelectronics

STM32L151x8 데이터시트(HTML) 92 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

데이터시트 다운로드

링크 URL