STPS8L30-Y datasheet(3/8 Pages) STMICROELECTRONICS

3 / 8 page

DocID024083 Rev 1

3/8

STPS8L30-Y

Characteristics

Figure 1. Average forward power

dissipation vs. average forward current

Figure 2. Average forward current versus

ambient temperature (

δ = 0.5)

P(W)

F(AV)

δ=tp/T

(A)

F(AV)

δ = 1

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

468

0.0

1.0

2.0

3.0

4.0

5.0

100

125

150

(A)

F(AV)

(°C)

amb

=70°C/W

th(j-a)

R=R

th(j-a)

th(j-c)

Figure 3. Non repetitive surge peak forward

current versus overload duration (maximum

values)

Figure 4. Relative variation of thermal

impedance junction to ambient versus pulse

duration

1E-3

1E-2

1E-1

1E+0

100

120

δ=0.5

I (A)

t(s)

T =25°C

T =75°C

T =125°C

Z/R

th(j-c)

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Figure 5. Reverse leakage current vs. reverse

voltage applied (typical values)

Figure 6. Junction capacitance vs. reverse

voltage applied (typical values)

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

3E+2

I (mA)

V (V)

T =125°C

T =150°C

T =25°C

110

100

200

500

1000

2000

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

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