STPS10L25 datasheet(2/12 Pages) STMICROELECTRONICS

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Characteristics

STPS10L25

2/12

DocID3619 Rev 5

Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

IF(RMS)

Forward rms current

IF(AV)

Average forward current

δ = 0.5 square wave

TC = 140 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

200

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

395

Tstg

Storage temperature range

-65 to +150

°C

Maximum operating junction temperature (1)

150

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Max .value

Unit

Rth(j-c)

Junction to case

1.5

°C/W

Table 4: Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

800

µA

Tj = 125 °C

135

260

VF(1)

Forward voltage drop

Tj = 25 °C

IF = 10 A

0.46

Tj = 125 °C

0.30

0.35

Tj = 25 °C

IF = 20 A

0.55

Tj = 125 °C

0.41

0.48

Notes:

(1)Pulse test: tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses, use the following equation:

P = 0.22 x IF(AV) + 0.013 x IF2(RMS)

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