January 2017

DocID030271 Rev 1

1/10

This is information on a product in full production.

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STPSC2H12

1200 V power Schottky silicon carbide diode

Datasheet - production data

Features



No or negligible reverse recovery



Switching behavior independent of

temperature



Robust high voltage periphery







Description

The SiC diode, available in TO-220AC and DPAK

HV, is an ultrahigh performance power Schottky

rectifier. It is manufactured using a silicon carbide

substrate. The wide band-gap material allows the

1200 V rating. Due to the Schottky construction,

no recovery is shown at turn-off and ringing

patterns are negligible. The minimal capacitive

turn-off behavior is independent of temperature.

Especially suited for use in PFC and secondary

side applications, this ST SiC diode will boost the

performance in hard switching conditions. This

rectifier will enhance the performance of the

targeted application. Its high forward surge

capability ensures a good robustness during

transient phases.

Table 1: Device summary

Symbol

Value

2 A

1200 V

175 °C

1.35 V

A

K

A

K

K

TO-220AC

DPAK HV 2L

A

K

K