PBSS5350Z datasheet(4/12 Pages) PHILIPS

4 / 12 page

2003 May 13

Philips Semiconductors

Product speciﬁcation

50 V low VCEsat PNP transistor

PBSS5350Z

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current VCB = −50 V; IE =0

−−−100

VCB = −50 V; IE = 0; Tj = 150 °C

−−−50

µA

IEBO

emitter-base cut-off current

VEB = −5 V; IC =0

−−−100

hFE

DC current gain

VCE = −2V;

IC = −500 mA

200

−−

IC = −1 A; note 1

200

−−

IC = −2 A; note 1

100

−−

VCEsat

collector-emitter saturation

voltage

IC = −500 mA; IB = −50 mA

−−−100

IC = −1 A; IB = −50 mA

−−−180

IC = −2 A; IB = −200 mA; note 1

−−−300

RCEsat

equivalent on-resistance

IC = −2 A; IB = −200 mA; note 1

−

120

<150

Ω

VBEsat

base-emitter saturation

voltage

IC = −2 A; IB = −200 mA; note 1

−−−1.2

VBEon

base-emitter turn-on voltage

VCE = −2 V; IC = −1 A; note 1

−−−1.1

transition frequency

IC = −100 mA; VCE = −5V;

f = 100 MHz

100

−−

MHz

collector capacitance

VCB = −10 V; IE =Ie = 0; f = 1 MHz

−−

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