STTH2R06-Y datasheet(4/8 Pages) STMICROELECTRONICS

4 / 8 page

Characteristics

STTH2R06-Y

4/8

DocID026718 Rev 1

Figure 7. Reverse recovery charges versus

dIF/dt (typical values)

Figure 8. Relative variation of dynamic

parameters versus junction temperature

QnC

RR()

100

150

200

250

300

350

400

100

200

300

400

500

V = 400 V

T = 125 °C

I = 2 x I (av)

I = I (av)

I = 0.5 x I (av)

dI /dt A/µ

(s)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

100

125

QRR

tRR

IRM

I = I (av)

V = 400 V

Reference: T = 125 °C

T°C

j()

Figure 9. Transient peak forward voltage versus

dIF/dt (typical values)

Figure 10. Forward recovery time versus dIF/dt

(typical values)

100

120

140

160

180

200

dI /dt A/µ

(s)

I= I

F(AV)

T = 125 °C

FP()

ns)

FR(

100

120

100

120

140

160

180

200

I= I

F(AV)

= 2.5 V

T = 125 °C

dI /dt A/µ

(s)

Figure 11. Junction capacitance versus reverse

voltage applied (typical values)

Figure 12. Thermal resistance junction to

ambient versus copper surface under each lead

(typical values)

C pF)

(

100

1000

VR(V)

F = 1 MHz

= 30 mV

osc

RMS

T = 25 °C

Rth(j-a)(°C/W)

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

SMBflat

(cm²)

epoxy printed circuit board FR4, copper thickness: 35 µm

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