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STTH5R06-Y 데이터시트(PDF) 2 Page - STMicroelectronics

부품명 STTH5R06-Y
상세설명  Low reverse recovery current
PDF  9 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STTH5R06-Y 데이터시트(HTML) 2 Page - STMicroelectronics

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Characteristics
STTH5R06-Y
2/9
Doc ID 17655 Rev 1
1
Characteristics
To evaluate the maximum conduction losses use the following equation:
P = 1.35 x IF(AV) + 0.12 IF
2
(RMS)
Table 2.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
600
V
IF(RMS) Forward rms current
D2PAK
25
A
DPAK
10
IF(AV)
Average forward current
δ = 0.5
D2PAK / DPAK
Tc = 145 °C
5
A
IFSM
Surge non repetitive forward
current
Tp = 10 ms sinusoidal
D2PAK
70
A
DPAK
50
A
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Operating junction temperature range
-40 to + 175
°C
Table 3.
Thermal parameter
Symbol
Parameter
Maximum
Unit
Rth(j-c)
Junction to case
2.2
°C/W
Table 4.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 5 ms, δ < 2 %
Reverse leakage current
Tj = 25 °C
VR = VRRM
30
µA
Tj = 125 °C
30
300
VF
(2)
2.
Pulse test: tp = 380 µs, δ < 2 %
Forward voltage drop
Tj = 25 °C
IF = 5 A
3.2
V
Tj = 125 °C
1.5
1.95



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