STTH8R06-Y datasheet(3/8 Pages) STMICROELECTRONICS

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STTH8R06-Y

Characteristics

Doc ID 022291 Rev 1

3/8

Table 5.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 0.5 A,

Irr = 0.25 A, IR =1 A

IF = 1 A,

dIF/dt = -50 A/µs,

VR = 30 V

IRM

Reverse recovery current

Tj = 125 °C

IF = 8 A, VR = 400 V,

dIF/dt = -200 A/µs

5.5

7.2

S factor Softness factor

0.4

Qrr

Reverse recovery charges

150

tfr

Forward recovery time

Tj = 25 °C

IF = 8 A,

dIF/dt = 64 A/µs

VFR = 2.5 V

200

VFP

Forward recovery voltage

Figure 1.

Average forward power dissipation

versus average forward current

Figure 2.

Forward voltage drop versus

forward current

P(W)

123

4567

(A)

F(AV)

δ = 0.2

δ = 1

δ = 0.05

δ = 0.1

δ = 0.5

δ=tp/T

(A)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

Tj=125 °C

(Maximum values)

Tj=125 °C

(Typical values)

Tj=25 °C

(Maximum values)

(V)

Figure 3.

Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 4.

Peak reverse recovery current

versus dIF/dt (typical values)

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

t (s)

(A)

100

150

200

250

300

350

400

450

500

IF=IF(AV)

VR=400 V

Tj=125 °C

dI /dt(A/µs)

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