STTH8S12 datasheet(4/8 Pages) STMICROELECTRONICS

부품명	STTH8S12

상세설명	Low thermal resistance

PDF	8 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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4 / 8 page

Characteristics

STTH8S12

4/8

DocID026655 Rev 1

Figure 7. Reverse recovery charges versus

dIF/dt (typical values)

Figure 8. Reverse recovery softness factor

versus dIF/dt (typical values)

200

400

600

800

1000

1200

100

150

200

250

300

350

400

450

500

QRR(nC)

F = I F(AV)

R = 600 V

j = 125 °C

dIF/dt(A/µs)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

100

150

200

250

300

350

400

450

500

SFACTOR

F=IF(AV)

R=600 V

j=125 °C

dIF/dt(A/µs)

Figure 9. Relative variations of dynamic

parameters versus junction temperature

Figure 10. Junction capacitance versus reverse

voltage applied (typical values)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

100

125

F = I F(AV)

R = 600 V

Reference: T

j = 125 °C

FACTOR

Tj(°C)

C(pF)

100

1000

10000

F = 1 MHz

OSC = 30 mVRMS

j = 25 °C

R (V)

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