STTH8ST06 datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

STTH8ST06

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DocID024150 Rev 2

Characteristics

To evaluate the conduction losses use the following equation:

P = 2.2 x IF(AV) + 0.113 IF

(RMS)

Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

Tj from 25 to 150 °C

600

Tj = -40 °C

550

IF(RMS)

Forward rms current

IF(AV)

Average forward current,

δ = 0.5, square wave

Tc = 80 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

IFRM

Repetitive peak forward current

Tc = 80 °C, δ = 0.1

Tstg

Storage temperature range

-65 to +175

°C

Operating junction temperature range

-40 to +175

°C

Table 3. Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

2.9

°C/W

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-6

µA

Tj = 125 °C

200

(2)

Forward voltage drop

Tj = 25 °C

IF = 8 A

-3.4

Tj = 150 °C

2.5

3.1

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

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