| 전자부품 데이터시트 검색엔진 |
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PEB4065 데이터시트(PDF) 18 Page - Siemens Semiconductor Group |
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PEB4065 데이터시트(HTML) 18 Page - Siemens Semiconductor Group |
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18 / 29 page ![]() PEB/F 4065 Electrical Characteristics Semiconductor Group 18 1998-03-01 2.5 AC-Characteristics (Normal and reverse polarity unless otherwise stated) Table 8 No. Parameter Symbol Mode Limit Values Unit Test Fig. Test Condition min. typ. max. PEB/ PEF Line Termination TIP, RING 57. Receive gain Gr CONV, BB 31.92 32.04 32.16 dB 4 V 2W,AC =50 mVrms f = 1015 Hz I ab =20 mA 58. CONV 31.88 32.04 32.2 dB I ab =50 mA 59. Gain flatness (guaranteed by design) dGr CONV, BB – 0.05 – 0.05 dB – 300 Hz < f < 3400 Hz V 2W,AC =50 mVrms 60. Gain tracking (guaranteed by design) dGr CONV – 0.2 – 0.2 dB – 3 dBm0 > V ab > –20dBm0 f = 1015 Hz 61. Total harmonic distortion V ab THD CONV – – 0.3 % 4 V 2W,AC =50 mVrms f = 1015 Hz I ab =20 mA 62. Teletax distortion THDTTX CONV –– 3 % 5 f =16 kHz R L = 200 Ω I ab =50 mA V ab,AC =2 Vrms 63. – – 3 % V ab,AC =5 Vrms I ab =0 mA, V ab =55 V 64. – – 5 % V ab,AC =2 Vrms 65. Psophometric noise N P, Vab CONV – – – 75 dBmp 4 I ab =30 mA 66. Longitudinal to transversal rejection ratio V long/Vab LTRR CONV 61/58 – – dB 6 V long =3 Vrms 300 Hz < f <3.4 kHz I ab =30 mA 67. Transversal to longitudinal rejection ratio V ab/Vlong TLRR CONV 50 – – dB 7 V 2W,AC = 150 mVrms 300 Hz < f <3.4 kHz I ab =30 mA |
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