DocID024850 Rev 3

5/22

STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5

Electrical characteristics

22

The built-in back-to-back Zener diodes have been specifically designed to enhance not only

the device’s ESD capability, but also to make them capable of safely absorbing any voltage

transients that may occasionally be applied from gate to source. In this respect, the Zener

voltage is appropriate to achieve efficient and cost-effective protection of device integrity.

The integrated Zener diodes thus eliminate the need for external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

t

d(on)

Turn-on delay time

V

DD

= 475 V, I

D

= 4 A,

R

G

= 4.7

Ω, V

GS

= 10 V

(see Figure 19)

-22

-

ns

t

r

Rise time

-

14

-

ns

t

d(off)

Turn-off-delay time

-

51

-

ns

t

f

Fall time

-

15

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

I

SD

Source-drain current

-

8

A

I

SDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

32

A

V

SD

(2)

2.

Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage

I

SD

= 8 A, V

GS

= 0

-

1.5

V

t

rr

Reverse recovery time

I

SD

= 8 A, di/dt = 100 A/μs

V

DD

= 60 V

(see Figure 21)

-

404

ns

Q

rr

Reverse recovery charge

-

5.2

μC

I

RRM

Reverse recovery current

-

25.5

A

t

rr

Reverse recovery time

I

SD

= 8 A, di/dt = 100 A/μs

V

DD

= 60 V T

J

= 150 °C

(see Figure 21)

-

596

ns

Q

rr

Reverse recovery charge

-

6.9

μC

I

RRM

Reverse recovery current

-

23

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

V

(BR)GSO

Gate-source breakdown voltage

I

GS

= ± 1mA, I

D

=0

30

-

-

V