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STP42N60M2-EP 데이터시트(PDF) 7 Page - STMicroelectronics |
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STP42N60M2-EP 데이터시트(HTML) 7 Page - STMicroelectronics |
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7 / 20 page ![]() STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP Electrical characteristics DocID027327 Rev 1 7/20 Figure 8: Gate charge vs gate-source voltage Figure 9: Static drain-source on-resistance Figure 10: Capacitance variations Figure 11: Output capacitance stored energy Figure 12: Turn-off switching loss vs drain current Figure 13: Normalized gate threshold voltage vs temperature V DD = 480 V I D = 34 A V DS V GS (V) V DS (V) Q g(nC) 0 100 200 300 400 500 0 2 4 6 8 10 12 0 10 20 30 40 50 60 GIPG080120151019ALS V GS = 10 V R DS(on) (Ω) I D(A) 0.072 0.074 0.076 0.078 0.080 0 5 10 15 20 25 30 35 GIPG080120151046ALS 1 10 100 1000 10000 0.1 1 10 100 C ISS C OSS C RSS C (pF) V DS(V) f = 1 Mhz GIPG080120151120ALS 0 2 4 6 8 10 12 14 16 18 0 200 400 600 E OSS (µJ) V DS(V) GIPG080120151125ALS E OFF (µJ) I D(A) 10 12 14 16 18 0 1 2 3 4 5 6 7 GIPG080120151154ALS -75 -25 25 75 125 0.6 0.7 0.8 0.9 1 1.1 V GS(th) (norm) I D = 250 µA T J(°C) GIPG080120151205ALS |
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