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STP2N105K5 데이터시트(PDF) 1 Page - STMicroelectronics |
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STP2N105K5 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 21 page ![]() This is information on a product in full production. November 2014 DocID026321 Rev 3 1/21 STD2N105K5, STP2N105K5, STU2N105K5 N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Figure 1. Internal schematic diagram Features • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. AM01476v1 TO-220 1 2 3 TAB 1 3 TAB DPAK IPAK 3 2 1 TAB Order codes VDS RDS(on) max ID PTOT STD2N105K5 1050 V 8 Ω 1.5 A 60 W STP2N105K5 STU2N105K5 Table 1. Device summary Order codes Marking Package Packaging STD2N105K5 2N105K5 DPAK Tape and reel STP2N105K5 TO-220 Tube STU2N105K5 IPAK www.st.com |
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