DocID025105 Rev 3

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STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5

Electrical characteristics

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The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD

capability of the device. The Zener voltage is appropriate for efficient and cost-effective

intervention to protect the device integrity. These integrated Zener diodes thus eliminate the

need for external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Turn-on delay time

(see Figure 18)

-

16.5

-

ns

Rise time

-

15

-

ns

Turn-off-delay time

-

36

-

ns

Fall time

-

21

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ. Max. Unit

Source-drain current

-

3

A

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

12

A

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

-

1.5

V

Reverse recovery time

(see Figure 20)

-242

ns

Reverse recovery charge

-

1.42

µC

Reverse recovery current

-

12

A

Reverse recovery time

(see Figure 20)

-373

ns

Reverse recovery charge

-

1.98

µC

Reverse recovery current

-

10.5

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Gate-source breakdown

voltage

30

-

V