STP11N65M2 datasheet(5/21 Pages) STMICROELECTRONICS

5 / 21 page

DocID026376 Rev 1

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STD11N65M2, STP11N65M2, STU11N65M2

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

d(on)

Turn-on delay time

= 325 V, I

= 3.5 A,

= 4.7

Ω, V

= 10 V

(see

Figure 16 and 21)

-9.5

Rise time

7.5

d(off)

Turn-off delay time

Fall time

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Source-drain current

SDM

(1) (2)

Pulse width limited by safe operating area

Test condition is referred to through-hole package

Source-drain current (pulsed)

(3)

Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage

= 0, I

= 7 A

1.6

Reverse recovery time

= 7 A

(2)

, di/dt = 100 A/μs

= 60 V (see

Figure 18)

-318

Reverse recovery charge

2.5

RRM

Reverse recovery current

15.5

Reverse recovery time

= 7 A, di/dt = 100 A/μs

= 60 V, T

=150 °C

(see

Figure 18)

-437

Reverse recovery charge

3.2

RRM

Reverse recovery current

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