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STP25N10F7 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STP25N10F7
상세설명  Ultra low on-resistance
PDF  21 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STP25N10F7 데이터시트(HTML) 5 Page - STMicroelectronics

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STD25N10F7, STF25N10F7, STP25N10F7
Electrical characteristics
21
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
V
DD
= 50 V, I
D
= 12.5 A,
R
G
= 4.7
Ω, V
GS
= 10 V
Figure 17
-9.8
-
ns
t
r
Rise time
-
14
-
ns
t
d(off)
Turn-off delay time
-
14.8
-
ns
t
f
Fall time
-
4.6
-
ns
Table 7. Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain current
-
25
A
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
100
A
V
SD
(2)
2.
Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
Forward on voltage
I
SD
= 25 A, V
GS
= 0
-
1.1
V
t
rr
Reverse recovery time
I
SD
= 25 A,
di/dt = 100 A/μs,
V
DD
= 80 V, T
j
= 150 °C
-38
ns
Q
rr
Reverse recovery charge
-
29
nC
I
RRM
Reverse recovery current
-
1.7
A



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