STD36P4LLF6

Electrical ratings

DocID025616 Rev 2

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1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Drain-source voltage

40

V

Gate-source voltage

± 20

V

36

A

26

A

IDM

(1)

Drain current (pulsed)

144

A

60

W

Storage temperature

-55 to 175

°C

Maximum junction temperature

175

°C

Notes:

(1)

Pulse width limited by safe operating area.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-case max

2.5

°C/W

For the P-channel Power MOSFET, current polarity of voltages and current have

to be reversed.