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STD46P4LLF6 데이터시트(PDF) 1 Page - STMicroelectronics |
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STD46P4LLF6 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() December 2014 DocID025772 Rev 3 1/16 This is information on a product in full production. www.st.com STD46P4LLF6 P- channel 40 V, 0.0125 Ω typ., StripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order codes VDSS RDS(on) max. ID STD46P4LLF6 40 V 0.015 Ω 46 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Table 1: Device summary Order codes Marking Package Packaging STD46P4LLF6 46P4LLF6 DPAK Tape and reel For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. AM11258v1 D(2, TAB) S(3) G(1) |
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