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STF80N10F7 데이터시트(PDF) 5 Page - STMicroelectronics |
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STF80N10F7 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 25 page ![]() DocID025865 Rev 1 5/25 STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 Electrical characteristics 25 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 80 A I SDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 320 A V SD (2) 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Forward on voltage I SD = 80 A, V GS = 0 - 1.1 V t rr Reverse recovery time I SD = 80 A, di/dt = 100 A/μs V DD = 80 V, T j =150 °C (see Figure 22) -70 ns Q rr Reverse recovery charge - 125 nC I RRM Reverse recovery current - 3.6 A |
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