DocID025974 Rev 1

3/14

STE88N65M5

Electrical ratings

14

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

GS

Gate- source voltage

± 25

V

I

D

Drain current (continuous) at T

C

= 25 °C

88

A

I

D

Drain current (continuous) at T

C

= 100 °C

55.7

A

I

DM

(1)

1.

Pulse width limited by safe operating area.

Drain current (pulsed)

352

A

P

TOT

Total dissipation at T

C

= 25 °C

494

W

I

AR

Max current during repetitive or single pulse avalanche

(pulse width limited by T

JMAX

)

15

A

E

AS

Single pulse avalanche energy

(starting T

j

= 25°C, I

D

= I

AR

, V

DD

= 50V)

2000

mJ

dv/dt

(2)

2.

I

SD

≤ 88 A, di/dt = 400 A/μs, V

DD

= 400 V, V

DS (peak)

< V

(BR)DSS.

Peak diode recovery voltage slope

15

V/ns

T

stg

Storage temperature

- 55 to 150

°C

T

j

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

R

thj-case

Thermal resistance junction-case max

0.253

°C/W

R

thj-amb

Thermal resistance junction-ambient max

30

°C/W