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STF7N105K5 데이터시트(PDF) 1 Page - STMicroelectronics |
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STF7N105K5 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() June 2016 DocID026184 Rev 2 1/14 This is information on a product in full production. www.st.com STF7N105K5 N- channel 1050 V, 1.4 Ω typ., 4 A MDmesh™ K5 Power MOSFET in TO-220FP package Datasheet - production data Figure 1: Internal schematic diagram Features Order code V DS RDS(on) max. ID PTOT STF7N105K5 1050 V 2.0 Ω 4 A 25 W Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packaging STF7N105K5 7N105K5 TO-220FP Tube TO-220FP AM15572v1_no_tab D(2) G(1) S(3) |
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