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STF12N120K5 데이터시트(PDF) 1 Page - STMicroelectronics |
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STF12N120K5 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() This is information on a product in full production. May 2015 DocID026396 Rev 2 1/16 STF12N120K5, STFW12N120K5 N-channel 1200 V, 0.62 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in TO-220FP and TO-3PF packages Datasheet - production data Figure 1. Internal schematic diagram Features • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. TO-3PF TO-220FP Order code VDS RDS(on) max. ID PTOT STF12N120K5 1200 V 0.69 Ω 12 A 40 W STFW12N120K5 63 W Table 1. Device summary Order code Marking Packages Packing STF12N120K5 12N120K5 TO-220FP Tube STFW12N120K5 TO-3PF www.st.com |
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