RN1101

~RN1106

2001-06-07

1

Type No.

R1 (kΩ)

R2 (kΩ)

RN1101

4.7

4.7

RN1102

10

10

RN1103

22

22

RN1104

47

47

RN1105

2.2

47

RN1106

4.7

47

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1101,RN1102,RN1103

RN1104,RN1105,RN1106

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN2101~RN2106

Equivalent Circuit and Bias Resister Values

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1101~1106

50

V

RN1101~1104

10

Emitter-base voltage

RN1105, 1106

5

V

Collector current

100

mA

Collector power dissipation

100

mW

Junction temperature

150

°C

Storage temperature range

RN1101~1106

−55~150



°C

JEDEC

―

EIAJ

―

TOSHIBA

2-2H1A

Weight: 2.4mg

Unit: mm