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STF18N65M2 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STF18N65M2
상세설명  Extremely low gate charge
PDF  13 Pages
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STF18N65M2 데이터시트(HTML) 5 Page - STMicroelectronics

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STF18N65M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
12
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
48
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 12 A, VGS = 0
-
1.6
V
trr
Reverse recovery time
ISD = 12 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 16)
-331
ns
Qrr
Reverse recovery charge
-
3.4
µC
IRRM
Reverse recovery current
-
20.5
A
trr
Reverse recovery time
ISD = 12 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 16)
-462
ns
Qrr
Reverse recovery charge
-
4.6
µC
IRRM
Reverse recovery current
-
20
A



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